News/2016-03-01 の履歴(No.1)

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日本無線株式会社との共同研究成果が論文賞を受賞しました。
RF-MEMS VCO wins a paper award.
2016-03-01†

日本無線株式会社との共同研究成果をまとめた論文が、英文特集号優秀論文を受賞しました。この論文では、シリコン表面マイクロマシニングとメッキ技術により、２ｍｍ角のチップ上に静電気で動作する高周波スイッチ型の２ビット可変静電容量を集積化し、スイッチング状態をデジタル制御することで８００ＭＨｚ帯のＶＣＯ（電圧制御発振回路）の周波数を制御した研究成果を報告しています。

One of our paper submitted to IEEJ special issue has won a best paper award. This work was performed in collaboration with Japan Radio Corp., and we developed an electrostatically tunable digital tunable capacitor for VCO (voltage controlled oscillator).

• Kenichiro Urayama, Koichiro Akahori, Nobuyuki Adachi, Hiroyuki Fujita, and Hiroshi Toshiyoshi, "Digitally Tuned RF-MEMS Varactors Implemented in an 800-MHz Low Phase Noise VCO," IEEJ Trans. SM, vol. 136, no. 3, 2016, pp. 44-54.
• Link to J-Stage
• Introduction to the special issue
• 表彰式（６月２９日）の様子はこちら}
  Award presentation ceremony (June 29) is here.

Abstract†

• This paper reports on the design, fabrication, and measurement results of a voltage controlled oscillator (VCO) in the 800-MHz band that uses LC (inductor and capacitor) resonance controlled by a newly developed radio frequency microelectromechanical systems (RF-MEMS) varactor. In the system, a pair of metal-insulator-metal (MIM) capacitors is integrated with an electrostatic actuator made of an electroplated gold layer over a TEMPAXTM substrate. We used an insulator hinge made of Parylene-C for the first time to electrically isolate the switch contact from the electrostatic actuator body, thereby allowing an option to form a series of MIM capacitors. A packaged 2-bit MEMS varactor is operated at 35 Vdc to digitally control the capacitor values in four different states between 0.70 pF and 0.86 pF with a 0.05-pF-step at 1 GHz. A high-Q factor (electrical) of 60 is experimentally confirmed at 1 GHz with the MEMS varactor tuned to 0.86-pF. The VCO circuit was developed using the packaged 2-bit MEMS varactors and surface-mounted devices (SMDs) on a low-loss printed circuit board (PCB), and its free-running frequency controlled between 802 MHz and 822 MHz. It exhibited a low phase noise of -101 dBc/Hz at a 10 kHz offset from the carrier frequency.