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#multilang(en_US){{ *MEMS Resonators with Vacuum Electronics for RF-BPF }} #multilang(ja_JP){{ *ＭＥＭＳ真空エレクトロンニクスによる周波数フィルタ }} #author("2019-02-17T15:24:38+00:00","default:hiroshi","hiroshi") *ＭＥＭＳ真空エレクトロンニクスによる周波数フィルタ&br;MEMS Resonators with Vacuum Electronics for RF-BPF [#kacf8f17] #ref(MEMSRFconcept.jpg,left,around,wrap,30%) #multilang(en_US){{ Most RF-MEMS BPF (Band Pass Filters) today use capacitive coupling for both excitation and detection, and they may suffer from small number of electrons generated per one cycle of oscillation in particular when the device size becomes small. We have therefore employed another detection mechanism, which is field-emission electrons to be spatially modulated by the electrically biased micro/nano oscillators. }} #multilang(ja_JP){{ 従来のRF-MEMS技術によるバンドパスフィルタのほとんどは，振動子の励振／検出ともに静電容量結合を用いています．ところが，デバイスサイズが小さくなると，振動１回あたりに発生する電荷が小さくなり，信号の検出が大変難しくなります．そこで本研究では，マイクロ／ナノメカ振動子の検出方法として，真空中を飛ぶフィールド・エミッション（電界放出）電子を空間的に変調する方式を提案します． }} Most RF-MEMS BPF (Band Pass Filters) today use capacitive coupling for both excitation and detection, and they may suffer from small number of electrons generated per one cycle of oscillation in particular when the device size becomes small. We have therefore employed another detection mechanism, which is field-emission electrons to be spatially modulated by the electrically biased micro/nano oscillators. #clear #multilang(en_US){{ *Field Emission Tips Combined with MEMS Resonator }} #multilang(ja_JP){{ *ＭＥＭＳ共振器と電界電子放出ティップの組合せ }} *ＭＥＭＳ共振器と電界電子放出ティップの組合せ&br;Field Emission Tips Combined with MEMS Resonator [#v8e7c189] #ref(MEMSRFSEM.jpg,left,wrap,around,30%) #ref(MEMSRFtip.jpg,left,wrap,around,30%) #multilang(en_US){{ We have first test the field-emission from a silicon micro tip made by silicon micromachining technique. An SOI (Silicon-on-Insulator) wafer was patterned in the shape of micro bridge by silicon DRIE and then reshaped into a pair of sharp tips by wet etching of silicon. It was also possible to make one of the gate silicon tip into a shape of micromechanical oscillator as a field-emission modulator. }} #multilang(ja_JP){{ 最初の検証として，シリコンマイクロマシニングにより製作したシリコン製ティップからの電界放出現象を確認しました．SOIウエハをDRIEによってマイクロブリッジ形状に加工した後に，ウェットエッチングによって１対のシリコンティップに追加工します．また，シリコンティップのひとつを，機械的に動くゲート振動子として加工することもできます． }} We have first test the field-emission from a silicon micro tip made by silicon micromachining technique. An SOI (Silicon-on-Insulator) wafer was patterned in the shape of micro bridge by silicon DRIE and then reshaped into a pair of sharp tips by wet etching of silicon. It was also possible to make one of the gate silicon tip into a shape of micromechanical oscillator as a field-emission modulator. #clear #multilang(en_US){{ *Fowler-Nordheim Plot [#te9b1a32] }} #multilang(ja_JP){{ *Fowler-Nordheim プロット }} *Fowler-Nordheim プロット&br;Fowler-Nordheim Plot [#te9b1a32] #ref(FNplot.jpg,left,wrap,around,30%) #multilang(en_US){{ We set the chip into a high vacuum chamber and applied high DC voltages to observe I-V charactersitics, which was confirmed to be of the field-emission by the Fowler-Nordheim plot. }} #multilang(ja_JP){{ 製作したチップを高真空チャンバにセットして電圧を印加し，電圧-電流特性を測定したところ，左のFowler-Nordheimプロットにうまく乗ることがわかりました．これにより，この電流が電界放出によるものであることが確認されました． }} We set the chip into a high vacuum chamber and applied high DC voltages to observe I-V charactersitics, which was confirmed to be of the field-emission by the Fowler-Nordheim plot. #clear #multilang(en_US){{ *Contact Investigators [#c0a6c35c] -Kiyotaka Yamashita (Ph.D. Candidate) and Winston Sun (Postdoctoral Fellow) }} #multilang(ja_JP){{ *研究実施者 -Kiyotaka Yamashita (Ph.D. Candidate) and Winston Sun (Postdoctoral Fellow) }} #multilang(en_US){{ *References [#jd0be0ce] }} #multilang(ja_JP){{ *参考文献・発表論文 }} *参考文献・発表論文&br;References [#jd0be0ce] -Kiyotaka Yamashita, Winston Sun, Kuniyuki Kakushima, Hiroyuki Fujita, and Hiroshi Toshiyoshi, "An RF-MEMS Device with a Lateral Field-Emission Detector," The 18th Int. Vacuum Nanoelectronics Conference (IVNC 2005), 10-14 July 2005, St. Catherine's College, Oxford, UK. -Winston Sun,Kiyotaka Yamashita, Kuniyuki Kakushima, Hiroyuki Fujita, and Hiroshi Toshiyoshi, "A LATERAL FIELD-EMISSION RF MEMS DEVICE," The Croucher Foundation Advanced Study Institute (ASI) "Frontier Research on Nano-mechanics", May 17 - 20, 2005, Hong Kong.univ, Hong Kong. -Kiyotaka Yamashita, Winston Sun, Kuniyuki Kakushima, Hiroyuki Fujita, and Hiroshi Toshiyoshi, "A LATERAL FIELD-EMISSION RF MEMS DEVICE," Proc. 13th Int. Conf. on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05), June 5 - 9, 2005, Seoul, Korea. -[[IIS Openhouse 2007 version of this page (Japanese Only)>[[Research/RF Bandpass Filters by Micro Vacuum Electronics]]]]
