![[PukiWiki]](image/XYstage.jpg "[PukiWiki]")
#multilang(en_US){{ *High Voltage Driver Circuits as a Platform for MEMS Actuators }} #multilang(ja_JP){{ *高電圧ＭＥＭＳドライバ回路基盤技術 }} #author("2019-02-17T15:15:30+00:00","default:hiroshi","hiroshi") *高電圧ＭＥＭＳドライバ回路基盤技術&br;High Voltage Driver Circuits as a Platform for MEMS Actuators [#h85cfba2] #ref(johny1.jpg,left,wrap,around,50%) #multilang(en_US){{ Performace of microactuators such as fast response and large displacement is often determined by driving voltages, and high volatages (over several tens of volts) are usually used for MEMS actuators of lab-level development. From a practical point of view of MEMS, however, high-voltage drive circuitry such as operation-amplifiers is a costly solution. In addition to this, a highly integrated MEMS would suffer from the jam of electrical interconnection to and from the chip. In this work, we present an ASIC (Application Specific Integrated Circuit)-like post-processing and designing solution for integrating arbitrary MEMS actuators with pre-fabricated high-voltage analog and digital circuits by collaborating with TOSHIBA Corp. }} #multilang(ja_JP){{ 応答速度や一定電圧下での最大変位といったマイクロアクチュエータの特性は，使用できる駆動電圧の大小に左右されます．そのため，研究室レベルでのマイクロアクチュエータ駆動には数十Vの電圧が使われることがおおいのですが，一方，実用化を目指したMEMSデバイスを作ろうとすると，高電圧回路（オペアンプなど）はコストがかさみます．また，システム構成複雑になると，MEMSチップへの電気配線が膨大になります．本研究ではこの問題を解決するために，はじめから高電圧アナログ／デジタル混在回路を作っておいたシリコンチップ上に，あとからMEMSアクチュエータをポストプロセスでモノリシック集積化するためのASIC的な技術を，東芝との共同研究により開発しました． }} Performace of microactuators such as fast response and large displacement is often determined by driving voltages, and high volatages (over several tens of volts) are usually used for MEMS actuators of lab-level development. From a practical point of view of MEMS, however, high-voltage drive circuitry such as operation-amplifiers is a costly solution. In addition to this, a highly integrated MEMS would suffer from the jam of electrical interconnection to and from the chip. In this work, we present an ASIC (Application Specific Integrated Circuit)-like post-processing and designing solution for integrating arbitrary MEMS actuators with pre-fabricated high-voltage analog and digital circuits by collaborating with TOSHIBA Corp. #clear #multilang(en_US){{ *CMOS-First & MEMS-Last Integration }} #multilang(ja_JP){{ *CMOS-First & MEMS-Last 型集積化 }} *CMOS-First & MEMS-Last 型集積化&br;CMOS-First & MEMS-Last Integration [#oef0b56e] #ref(johny2.jpg,left,wrap,around,57%) #ref(johny4.jpg,left,wrap,around,50%) #multilang(en_US){{ The high-voltage IC chip (max 40 Vdc) is made with a blank field inside (7 mm x 6 mm), where MEMS actuators are to be post-fabricated. The structural layer for the MEMS is an 8-um-thick SOI (silicon on insulator) layer, which could be dry-etched by silicon DRIE (deep reactive ion etching). The carrier substrate (626 um thick) can be etched from the backside, if needed. High-voltage analog driver circuits and low-voltage digital circuits are made near the edges of chip; one of four segments contains a 16-bit-demultiplexer, four operational amplifiers are pre-fabricated. DC leves of the amps are fixed by the sample&hold. Connection to the MEMS actuators (or sensors) can be designed by MEMS users. }} #multilang(ja_JP){{ 耐圧40Vの高電圧ドライバ回路のチップを，内部に将来MEMSアクチュエータなどを作り込む空き地 (7 mm x 6 mm)を残したまま製作します．MEMSの構造となるのは，厚さ8umのSOI層で，これはシリコンDRIEによって加工します．もし必要であれば，厚さ625umの基板を裏側から同様にDRIEによって加工することも可能です．高電圧ドライバ回路と低電圧ロジック回路は，チップの周辺部分に配置されています．４組あるうちの１区画には，16ビットのデマルチプレクサ１個，12ビットのデジタル／アナログコンバータ１個，オペアンプ４個が含まれており，オペアンプの出力はサンプル・ホールド回路で電圧維持しています．MEMS部分と回路出力段の接続は，MEMS設計時に自由に決定可能です． }} The high-voltage IC chip (max 40 Vdc) is made with a blank field inside (7 mm x 6 mm), where MEMS actuators are to be post-fabricated. The structural layer for the MEMS is an 8-um-thick SOI (silicon on insulator) layer, which could be dry-etched by silicon DRIE (deep reactive ion etching). The carrier substrate (626 um thick) can be etched from the backside, if needed. High-voltage analog driver circuits and low-voltage digital circuits are made near the edges of chip; one of four segments contains a 16-bit-demultiplexer, four operational amplifiers are pre-fabricated. DC leves of the amps are fixed by the sample&hold. Connection to the MEMS actuators (or sensors) can be designed by MEMS users. #clear #multilang(en_US){{ *Test Run: Electrostatic Comb-Drive Actuators Integrated with Driver Circuits }} #multilang(ja_JP){{ *静電駆動くしば型アクチュエータとドライバ回路の集積化（試作） }} *静電駆動くしば型アクチュエータとドライバ回路の集積化（試作）&br;Test Run: Electrostatic Comb-Drive Actuators Integrated with Driver Circuits [#v44941d1] #ref(johny3.jpg,left,around,wrap,50%) #multilang(en_US){{ For demonstration, we have monolithically integrated an array of electrostatic comb-drive actuators with the driver circuits, and successfully observed driving operation on the chip. The amplifier was found to have a gain of approximately 50x for maximum 60 Vdc output. }} #multilang(ja_JP){{ 試作例として，櫛歯型静電駆動アクチュエータをドライバ回路とモノリシックに集積化し，その駆動に成功しました．ドライバ回路のアンプのゲインは約５０倍で，耐圧６０V程度あることが分かりました． }} For demonstration, we have monolithically integrated an array of electrostatic comb-drive actuators with the driver circuits, and successfully observed driving operation on the chip. The amplifier was found to have a gain of approximately 50x for maximum 60 Vdc output. #clear *Contact Investigator [#pf7b60d1] -[[Kazuhiro Takahashi]] *Reference [#y27b9c01] +K. Takahashi, H. N. Kwon, M. Mita, H. Fujita, H. Toshiyoshi, [[K. Suzuki:http://www.toshiba.co.jp/rdc/recruit/technology/suzukik.htm]], H. Funaki, "Monolithic Integration of High Voltage Driver Circuits and MEMS Actuators by ASIC-like postprocess," Proc. 13th Int. Conf. on Solid-State Sensors, Actuators and Microsystems ([[TRANSDUCERS '05:http://www.transducers05.org/]]), June 5 - 9, 2005, Seoul, Korea.
