Labware Setup for Vapor HF Release

vaporHFsetup.JPG
setupphoto.JPG

Thermal oxide (or similar pure SiO2) can be removed in vapor HF from 49% concentrated HF acid. Sample wafer(s) can be warmed by a light bulb to remove moisture on the surface to keep the process dry.

Etch Rate

etchrate.JPG

Etchrate seems to be almost equivalent to that of BHF (buffered HF) for thermal oxide. Careful trial & error is needed for your best results.

Release Results

releasedcantilevers.JPG

Maximum 1 millimeter long cantilever has been successfully released (with stress-controlled smartcut SOI, 1.5 microns SOI / 1.0 micron BOX).

References

  1. Yamato Fukuta, Hiroyuki Fujita, and Hiroshi Toshiyoshi, "Vapor Hydrofluoric Acid Sacrificial Release Technique for Micro Electro Mechanical Systems Using Labware," Jpn. J. Appl. Phys. Vol. 42, Part 1, No. 6A (2003), pp. 3690 - 3694.

    #ref(): File not found: "VHF_jjap.pdf" at page "Research/Vapor HF Sacrificial Oxide Release with Lab Utensils"

  2. Y. Fukuta, H. Fujita and H. Toshiyoshi, presented at IEE Japan (in Japanese):
    fukuta_denkititle.JPG

    #ref(): File not found: "vhf0.pdf" at page "Research/Vapor HF Sacrificial Oxide Release with Lab Utensils"


トップ   新規 一覧 検索 最終更新   ヘルプ   最終更新のRSS